Kinetics of hot elementary excitations in photoexcited polar semiconductorsALGARTE, A. C; VASCONCELLOS, A. R; LUZZI, R et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 2, pp 487-514, issn 0370-1972Article

High-frequency conductivity of a polar semiconductor with anisotropic conduction valleysGOETTIG, S.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 25, pp 4443-4461, issn 0022-3719Article

EFFECTIVE ELECTRON-HOLE INTERACTION FOR INTERMEDIATE AND STRONG ELECTRON-PHONON COUPLING.BARENTZEN H.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 1; PP. 245-258; ABS. ALLEM.; BIBL. 18 REF.Article

HALL COEFFICIENT FACTOR IN POLAR SEMICONDUCTORSKRANZER D.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 1; PP. 9-13; BIBL. 17 REF.Serial Issue

MICROWAVE MAGNETOCONDUCTIVITY OF POLAR SEMICONDUCTORS.NAG BR.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4819-4822; BIBL. 22 REF.Article

Long-wavelength LO-phonon generation during hot-electron cooling in polar semiconductorsKRAL, K; HEJDA, B.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11461-11464, issn 0163-1829Article

Evlution equations for the nonequilibrim LO-phonon dynamics in laser excited polar semiconductorsWESCHUH, U; HEINER, E; FULDE, P et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 221-227, issn 0370-1972Conference Paper

Effect of polar vibrations of the crystal lattice on the plasma frequency of heavily-doped semiconductors and correction for calculation of carrier concentrationWANG BAOMING; ZHANG GUANGYIN, Z.Infrared physics. 1983, Vol 23, Num 6, pp 329-331, issn 0020-0891Article

TIME-DEPENDENT MOMENTUM DISTRIBUTION OF POLARONS AT ARBITRARY TEMPERATURE AND ELECTRIC FIELDBROSENS F; DEVREESE JT.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 111; NO 2; PP. 591-597; ABS. GER; BIBL. 12 REF.Article

SUBBAND STRUCTURE OF N-CHANNEL INVERSION LAYERS ON POLAR SEMICONDUCTORSKAWAMOTO GH; QUINN JJ; BLOSS WL et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1875-1886; BIBL. 17 REF.Article

EXCITONS BOUND TO IONIZED DONORS IN POLAR SEMICONDUCTORS.GORZKOWSKI W.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 79; NO 2; PP. K151-K152; BIBL. 6 REF.Article

THEORY OF PHOTON-DRAG PHENOMENA IN POLAR AND PIEZOELECTRIC CRYSTALSYEE JH.1972; OPT. COMMUNIC.; NETHERL.; DA. 1972; VOL. 6; NO 4; PP. 333-338; BIBL. 9 REF.Serial Issue

Two-stage relaxation of the electron-phonon system in polar semiconductorsKRAL, K; HEJDA, B.Physica status solidi. B. Basic research. 1992, Vol 174, Num 1, pp 209-221, issn 0370-1972Article

Optical absorption by electron plasma in multivalley polar semiconductors with impuritiesGOETTIG, S.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 25, pp 4463-4478, issn 0022-3719Article

LOW-FIELD TRANSPORT PROPERTIES OF A POLAR SEMICONDUCTOR IN A QUANTIZING PARALLEL MAGNETIC FIELDMAGNUSSON B.1973; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1973; VOL. 56; NO 1; PP. 269-279; ABS. ALLEM.; BIBL. 12 REF.Serial Issue

CHEMICAL SHIFT AND ELECTRON-PHONON COUPLING IN POLAR SEMICONDUCTORS.HONERLAGE B; ROSSLER U; SCHRODER U et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2355-2360; BIBL. 32 REF.Article

DETERMINATION DES PARAMETRES DES CENTRES DE PIEGEAGE DANS LES SEMICONDUCTEURS D'APRES LA DEPENDANCE THERMIQUE DU PHOTOCOURANTLYUBCHENKO AV; SHEJNKMAN MK.1973; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1973; VOL. 18; NO 1; PP. 133-139; ABS. ANGL.; BIBL. 10 REF.Serial Issue

MODIFIELD FORM OF ENERGY DISTRIBUTION FUNCTION FOR HOT CARRIERS IN POLAR SEMICONDUCTORS AT HIGH TEMPERATURES. INCLUSION OF HIGHER-ORDER TERMSSODHA MS; PHADKE UP; CHAKRAVARTI AK et al.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4879-4882; BIBL. 9 REF.Serial Issue

PERTURBATION THEORY FOR A BOUND POLARONMITRA TK.1972; PHYS. LETTERS, A; NETHERL.; DA. 1972; VOL. 42; NO 3; PP. 223-224; BIBL. 5 REF.Serial Issue

Three-wave polariton solitons of new type in polar semiconductorsIVANOV, A. L; VYGOVSKII, G. S.Solid state communications. 1991, Vol 78, Num 9, pp 787-792, issn 0038-1098, 6 p.Article

Adsorption edge anomalies in polar semiconductors and dielectrics at phase transitionsZAMETIN, V. I.Physica status solidi. B. Basic research. 1984, Vol 124, Num 2, pp 625-640, issn 0370-1972Article

Transient behaviour of hot electrons in quantum-well structures of polar semiconductorsCHATTOPADHYAY, D.Physica status solidi. B. Basic research. 1983, Vol 119, Num 1, pp K77-K81, issn 0370-1972Article

ELECTRON-PHONON INTERACTIONS AND ELECTRON INVERSION LAYERS ON POLAR SEMICONDUCTORSRAHMAN TS; MILLS DL; RISEBOROUGH PS et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4081-4088; BIBL. 9 REF.Article

ON THE MAGNETIC FIELD DEPENDENCE OF CYCLOTRON-PHONON RESONANCE LINEWIDTHRAJU CS.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 12; PP. 1607-1609; ABS. ALLEM.; BIBL. 8 REF.Serial Issue

INFLUENCE DES OSCILLATIONS DE PLASMA SUR LA MOBILITE DES PORTEURS DANS LES SEMICONDUCTEURS POLAIRESKASIYAN AI; RUSSY PI.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1965-1969; BIBL. 16 REF.Article